MIG200J6CMB1W 2004-10-01 1/10 mitsubishi semiconductor MIG200J6CMB1W (600v/200a 6in1) high power switching applications motor control applications ? integrates inverter and control circuits (igbt drive units, and units for protection against short-circuit current, over-current, under-voltage and over-temperature) into a single package. ? the electrodes are isolated from the case ? low thermal resistance ? v ce (sat) = 2.0 v (typ.) ? ul recognized: file no.e87989 ? weight: 385 g (typ.) equivalent circuit 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l) 16 19 20 n p 18 17 14 13 15 4 3 2 1 8 7 6 5 12 11 10 9 gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd u v w
MIG200J6CMB1W 2004-10-01 2/10 package dimensions unit: mm 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l)
MIG200J6CMB1W 2004-10-01 3/10 signal terminal layout unit: mm 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l)
MIG200J6CMB1W 2004-10-01 4/10 maximum ratings (t j = 25c) stage characteristics condition symbol rating unit supply voltage p-n power terminal v cc 450 v collector-emitter voltage ? v ces 600 v collector current tc = 25c, dc i c 200 a forward current tc = 25c, dc i f 200 a collector power dissipation tc = 25c, dc p c 1000 w inverter junction temperature ? tj 150 c control supply voltage v d -gnd terminal v d 20 v input voltage in-gnd terminal v in 20 v fault output voltage fo-gnd terminal v fo 20 v control fault output current fo sink current i fo 10 ma operating temperature ? tc ? 20~ + 100 c storage temperature range ? t stg ? 40~ + 125 c isolation voltage ac 1 min v iso 2500 v module screw torque m5 ? 3 n?m electrical characteristics 1. inverter stage characteristics symbol test condition min typ. max unit tj = 25c ? ? 1 collector cut-off current i ces v ce = 600 v tj = 125c ? ? 10 ma tj = 25c 1.7 2.0 2.4 collector-emitter saturation voltage v ce (sat) v d = 15 v, i c = 200 a, v in = 15 v 0 v tj = 125c ? 2.2 ? v forward voltage v f i f = 200 a, tj = 25c ? 2.2 2.6 v t on ? 2.0 2.9 t c (on) ? 0.4 ? t rr ? 0.2 ? t off ? 1.3 2.3 switching time t c (off) v cc = 300 v, i c = 200 a v d = 15 v, v in = 3 v ? 0 v tj = 25c, inductive load (note 1) ? 0.2 ? s note 1: switching time test circuit & timing chart
MIG200J6CMB1W 2004-10-01 5/10 2. control stage (t j = 25c) characteristics symbol test condition min typ. max unit high side i d (h) ? 13 17 control circuit current low side i d (l) v d = 15 v ? 39 51 ma input on signal voltage v in (on) 1.4 1.6 1.8 input off signal voltage v in (off) v d = 15 v 2.2 2.5 2.8 v protection i fo (on) ? 10 12 fault output current normal i fo (off) v d = 15 v ? ? 0.1 ma over current protection trip level inverter oc v d = 15 v, t j < = ? ? a short circuit protection trip level inverter sc v d = 15 v, t j < = ? ? a over current cut-off time t off (oc) v d = 15 v ? 5 ? s trip level ot 110 118 125 over temperature protection reset level otr case temperature ? 98 ? c trip level uv 11.0 12.0 12.5 control supply under voltage protection reset level uvr ? 12.0 12.5 13.0 v fault output pulse width t fo v d = 15 v 1 2 3 ms 3. thermal resistance (tc = 25c) characteristics symbol test condition min typ. max unit igbt ? ? 0.125 junction to case thermal resistance r th (j-c) frd ? ? 0.195 c/w case to fin thermal resistance r th (c-f) compound is applied ? 0.013 ? c/w
MIG200J6CMB1W 2004-10-01 6/10 switching time test circuit timing chart pg tlp559 (igm) 15 v 0.1 f 47 f 15 k ? f 47 f 15 k ? = 16ma n input pulse v in waveform i c waveform v ce waveform 2.5 v 1.6 v 15 v 10% 10% t o ff t c (o ff ) 10% 10% t o n t c (o n ) 0 90% i rr t rr i rr 20% i rr 90%
MIG200J6CMB1W 2004-10-01 7/10 4. recommended conditions for application characteristics symbol test condition min typ. max unit supply voltage v cc p-n power terminal ? 300 400 v control supply voltage v d v d -gnd signal terminal 13.5 15 16.5 v carrier frequency fc pwm control ? ? 20 khz dead time (note 2) tdead switching time test circuit (see page.6) 4 ? ? s note 2: the table lists dead time requirements for the module input, excluding photocoupler delays. when specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. dead time timing chart t dead 15 v v in waveform v in waveform 0 15 v 0 t dead
MIG200J6CMB1W 2004-10-01 8/10 forward current i f (a) switching time ( s) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) switching time ? i c switching time ( s) collector current i c (a) switching time ? i c forward voltage v f (v) i f ? v f forward current i f (a) t rr , i rr ? i f peak reverse recovery current irr (a) reverse recovery time trr ( 10 ns) 0 0 1 2 3 4 100 200 300 400 common emitter tj = 25c v d = 17 v 15 v 13 v 0 0 1 2 3 4 100 200 300 400 common emitter tj = 125c v d = 17 v 15 v 13 v 0.01 0 50 100 150 200 250 0.1 1 10 tj = 25c v cc = 300 v v d = 15 v l-load t on t off t c ( on ) t c ( off ) 0.01 0 50 100 150 200 250 0.1 1 10 tj = 125c v cc = 300 v v d = 15 v l-load t on t off t c ( on ) t c ( off ) 1 0 10 100 50 100 150 200 250 common cathode : tj = 25c : tj = 125c i rr t rr 0 0 1 2 3 4 50 100 150 200 250 400 common cathode : tj = 25c : tj = 125c 300 350
MIG200J6CMB1W 2004-10-01 9/10 transient thermal resistance r th (t) (c / w) collector current i c (a) case temperature tc (c) oc ? tc over current protection trip level oc (a) carrier frequency f c (khz) i d (h) ? f c high side control circuit current i d (h) (ma) carrier frequency f c (khz) i d (l) ? f c low side control circuit current i d (l) (ma) collector-emitter voltage v ce (v) reverse bias soa pulse width t w (s) r th (t) ? t w inverter stage 0 0 25 50 75 100 125 150 100 200 300 400 500 600 v d = 15 v 0 0 5 10 15 20 25 10 20 30 40 50 v d = 15 v tj = 25c 0 0 5 10 15 20 25 20 40 60 80 100 120 v d = 15 v tj = 25c 0 0 200 400 600 80 160 240 320 400 v d = 15 v tj < = = 25c transistor 100 300 500 700
MIG200J6CMB1W 2004-10-01 10/10 turn on loss ? i c turn off loss ? i c collector current i c (a) collector current i c (a) turn off loss eoff (mj) turn on loss eon (mj) 0.01 0 50 150 250 0.1 1 10 100 v cc = 300 v v d = 15 v l-load : tj = 25c : tj = 125c 100 200 0.01 0.1 1 10 100 v cc = 300 v v d = 15 v l-load : tj = 25c : tj = 125c 0 50 150 250 100 200
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